Electron transport properties of a strained Si layer on a relaxed Si,-,Ge, substrate by Monte Carlo sitmlation
نویسندگان
چکیده
The in-plane transport properties of a strained ( 100) Si layer on a relaxed Sii -XGe, substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy AE)O. 1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm’/v s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon AE, and for AE=0.4 eV, reaches 4.1 X lo7 cm/s at 300 K, and 5.2~ 10” cm/s at 77 K. -
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